• NON DISPONIBILE cantattaci per tempi di consegna

SSD-SOLID STATE DISK M.2(2280) NVME2.0 1000GB (1TB) PCIE4.0X4 SAMSUNG MZ-V9V1T0BW 990 READ:7150MB/S-WRITE:6450MB/S

MZ-V9V1T0BW
SAMSUNG
Cod. Articolo V23911
291,57 €
Tasse incluse
Quantità
NON DISPONIBILE cantattaci per tempi di consegna

Descrizione

Overview
Interface: PCIe 4.0 x4, NVMe 2.0
Sequential Read: 7,150MB/s
Sequential Write: 6,450MB/s
Application: Client PCs
Weight: Max 9.0g
Dimension (WxHxD): Max 80.15 x Max 22.15 x Max 2.38 mm

General Feature
Application: Client PCs
Capacity: 1,000GB (1GB=1 Billion bytes by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Form Factor: M.2 (2280)
Interface: PCIe 4.0 x4, NVMe 2.0
Dimension (WxHxD): Max 80.15 x Max 22.15 x Max 2.38 mm
Weight: Max 9.0g
Storage Memory: Samsung V-NAND
Controller: Samsung in-house Controller
Cache Memory: HMB(Host Memory Buffer)

Special Feature
TRIM Support: Supported
S.M.A.R.T Support: Supported
GC (Garbage Collection): Supported
Encryption Support: AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive (IEEE1667)
WWN Support: Not supported
Device Sleep Mode Support: Yes

Performance
Sequential Read: 7,150MB/s
Sequential Write: 6,450MB/s
Random Read: 700KIOPS
Random Write: 1,100KIOPS

Environment
Average Power Consumption (system level): Average: Read 4.0 W / Write 3.7 W *Actual power consumption may vary depending on system hardware & configuration
Power consumption (Idle): Typical 55 mW * Actual power consumption may vary depending on system hardware & configuration
Power Consumption (Device Sleep): Typical 3 mW * Actual power consumption may vary depending on system hardware & configuration
Allowable Voltage: 3.3 V ± 5 % Allowable voltage
Reliability (MTBF): 1.5 million Hours
Operating Temperature: 0°C to 70°C
Shock: 1,500G(Gravity), duration: 0.5ms, 3 axis

Dettagli del prodotto
MZ-V9V1T0BW

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